논문
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
구분 : International Journal 저자 : 왕건욱 게재년월 : 2024.04 게재지 : Advanced Materials
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
