논문
Influence of Gate Dielectric and Channel Scaling on the Low-Frequency Noise Characteristics of InGaZnO Field-Effect Transistors
구분 : International Journal 저자 : 황도경 게재년월 : 2026.02 게재지 : ACS Applied Electronic Materials
Influence of Gate Dielectric and Channel Scaling on the Low-Frequency Noise Characteristics of InGaZnO Field-Effect Transistors
