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Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
Category : International Journal Editor : 왕건욱 Published Date : 2024.04 Publications : Advanced Materials
Boltzmann Switching MoS2 Metal–Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky–Mott Limit
