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Reversible Polarity Control in 2D MoTe2 Field-Effect Transistors for Complementary Logic Gate Applications

Category : International Journal Editor : 왕건욱 Published Date : 2024.05 Publications : Advanced Functional Materials

Reversible Polarity Control in 2D MoTe2 Field-Effect Transistors for Complementary Logic Gate Applications

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Artificial neuromodulator-synapse mimicked by a three-terminal vertical organic ferroelectric barristor for fast and energy-efficient neuromorphic computing

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Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide

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